Relation between Energy gap and refractive index for Alklai Halides and II-VI and III-V Group Compound Semiconductors

Abstract

In the present study we have studied the variation between the energy gap and refractive index of the material using the relations given by Moss and ravindra et.al[9]. The two most interesting optical properties of semiconductors are the absorption edge, or optical energy gap, and the refractive index. It is therefore natural that attempts have been made to find a general relationship between these parameters, both from the point of view of fundamentals interest and also as a technological aid in estimating the refractive index if only the energy gap is known. The first proposal was made by Moss[10] on very general grounds that all energy level in a solid are scaled down by a factor(1/ɛ²_∞),where ɛ_∞=n² is the optical dielectric constant.